Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 5(5), p. 1206-1215, 2017
DOI: 10.1039/c6tc04709b
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Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping
Journal article published in 2017 by
Zhiheng Wu,
Zhiqiang Yao 
,
Suilin Liu,
Bin Yuan,
Yake Zhang,
Yu Liang,
Zhuo Wang,
Xiaosheng Tang,
Guosheng Shao
,
Suilin Liu,
Bin Yuan,
Yake Zhang,
Yu Liang,
Zhuo Wang,
Xiaosheng Tang,
Guosheng Shao
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Abstract
A novel strategy to achieve high performance thin-film transistors based on carrier concentration-graded InGaZnO channels using Al2O3-passivated HfO2 as a dielectric layer was established.