Published in
2008 9th International Conference on Ultimate Integration of Silicon
DOI: 10.1109/ulis.2008.4527151
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Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling
Proceedings article published in 2008 by
S. Monaghan,
P. K. Hurley 
,
K. Cherkaoui,
M. A. Negara,
A. Schenk
,
K. Cherkaoui,
M. A. Negara,
A. Schenk
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