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Royal Society of Chemistry, Nanoscale, 47(8), p. 19910-19916

DOI: 10.1039/c6nr05100f

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Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions

Journal article published in 2016 by Endre Tóvári, Péter Makk, Ming-Hao Liu, Peter Rickhaus, Zoltán Kovács-Krausz, Klaus Richter, Christian Schönenberger, Christian Schönenberger, Szabolcs Csonka
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.