Published in
Elsevier, Microelectronic Engineering, 7-9(86), p. 1550-1553
DOI: 10.1016/j.mee.2009.03.003
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Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2
Journal article published in 2009 by
V. V. Afanas’ev,
A. Stesmans,
G. Brammertz 
,
A. Delabie,
S. Sionke,
A. O’Mahony,
I. M. Povey,
M. E. Pemble,
E. O’Connor,
P. K. Hurley ,
S. B. Newcomb
,
A. Delabie,
S. Sionke,
A. O’Mahony,
I. M. Povey,
M. E. Pemble,
E. O’Connor,
P. K. Hurley ,
S. B. Newcomb
This paper was not found in any repository, but could be made available legally by the author.
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