Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

The Electrochemical Society, Electrochemical and Solid-State Letters, 8(12), p. G40

Journal article published in 2009 by Byungha Shin, Joël Cagnon, Rathnait D. Long, Paul K. Hurley

, Susanne Stemmer, Paul C. McIntyre

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