Published in

Royal Society of Chemistry, Journal of Materials Chemistry, 13(20), p. 2680

DOI: 10.1039/b924255d

Links

Tools

Export citation

Search in Google Scholar

Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

Journal article published in 2010 by D. Guerin ORCID, S. Lenfant, S. Godey, D. Vuillaume
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

We report the synthesis and the electrical properties of fullerene-based molecular junctions on silicon substrate in which the highly π-conjugated molecule C60 (π quantum well) is isolated from the electrodes by alkyl chains (σ tunnel barriers). Initially, the Si/SiO2/\sigmaC60 architecture was prepared either by sequential synthesis (3 different routes) or by direct grafting of the presynthesized C60-σ-Si(OEt)3 molecule. We described the chemical synthesis of these routes and the physico-chemical properties of the molecular monolayers. Then, the second σ tunnel barrier was added on the Si/SiO2/σ C60 junction by applying a hanging mercury drop electrode thiolated with an alkanethiol monolayer. We compared the electronic transport properties of the Si/SiO2/σ C60//Hg and Si/SiO2/σ C60//\sigmaHg molecular junctions, and we demonstrated by transition voltage spectroscopy that the fullerene LUMO - metal Fermi energy offset can be tailored from ~ 0.2 eV to ~ 1 eV by changing the length of the alkyl chain between the C60 core and the Hg metal electrode (i. e. from direct C60//Hg contact to 14 carbon atoms tunnel barrier). ; Comment: Single pdf file including: main text, figures, tables and supporting information.