Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 39(3), p. 10293-10301
DOI: 10.1039/c5tc01890k
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The impact of atomic layer deposited SiO 2 passivation for high-k Ta 1−x Zr x O on the InP substrate
Journal article published in 2015 by
Chandreswar Mahata,
Il-Kwon Oh,
Chang Mo Yoon,
Chang Wan Lee,
Jungmok Seo 
,
Hassan Algadi,
Mi-Hyang Sheen,
Young-Woon Kim,
Hyungjun Kim,
Taeyoon Lee
,
Hassan Algadi,
Mi-Hyang Sheen,
Young-Woon Kim,
Hyungjun Kim,
Taeyoon Lee
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Abstract
Metal–oxide-semiconductor (MOS) capacitors with an amorphous Ta1−xZrxO composite gate dielectric film and a SiO2passivation layer were fabricated on an indium phosphide (InP) substrate.