Published in
Elsevier, Materials Science in Semiconductor Processing, 1-3(9), p. 58-61
DOI: 10.1016/j.mssp.2006.01.009
Links
Tools
The different behaviour of CiOi and CiCs defects in SiGe
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Postprint:
archiving forbidden
Published version:
archiving forbidden
Data provided by 