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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 4(4), p. 807-814

DOI: 10.1039/c5tc02960k

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Low-voltage pentacene thin-film transistors using Hf-based blend gate dielectrics

Journal article published in 2016 by Jeong-Do Oh, Dae-Kyu Kim, Jang-Woon Kim, Young-Geun Ha ORCID, Jong-Ho Choi
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

High-performance pentacene thin-film transistors operating at low voltages were fabricated using hafnium (Hf)-based blend gate dielectrics.