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IOP Publishing, Journal of Physics D: Applied Physics, 4(47), p. 045103

DOI: 10.1088/0022-3727/47/4/045103

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Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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