Published in
American Institute of Physics, Journal of Applied Physics, 2(105), p. 024510
DOI: 10.1063/1.3068367
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Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature and oxide charge
Journal article published in 2009 by
M. A. Negara,
K. Cherkaoui,
Hurley Hurley,
P. K. Hurley 
,
C. D. Young,
P. Majhi,
W. Tsai,
D. Bauza,
G. Ghibaudo
,
C. D. Young,
P. Majhi,
W. Tsai,
D. Bauza,
G. Ghibaudo
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