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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 23(2), p. 4515-4520, 2014

DOI: 10.1039/c4tc00524d

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Enhanced field emission of p-type 3C-SiC nanowires with B dopants and sharp corners

Journal article published in 2014 by Yang Yang, Hao Yang, Guodong Wei, Lin Wang, Minghui Shang ORCID, Zuobao Yang, Bin Tang, Weiyou Yang
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We report the enhanced field emission of B-doped SiC nanowires with a low turn-on field and enhanced high-temperature stability.