Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 23(2), p. 4515-4520, 2014
DOI: 10.1039/c4tc00524d
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Enhanced field emission of p-type 3C-SiC nanowires with B dopants and sharp corners
Journal article published in 2014 by
Yang Yang,
Hao Yang,
Guodong Wei,
Lin Wang,
Minghui Shang 
,
Zuobao Yang,
Bin Tang,
Weiyou Yang
,
Zuobao Yang,
Bin Tang,
Weiyou Yang
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Abstract
We report the enhanced field emission of B-doped SiC nanowires with a low turn-on field and enhanced high-temperature stability.