Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 21(2), p. 4233
DOI: 10.1039/c4tc00010b
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Flash memory based on solution processed hafnium dioxide charge trapping layer
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Abstract
Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory.