Royal Society of Chemistry, Chemical Communications, 92(49), p. 10862, 2013
DOI: 10.1039/c3cc46684a
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Oxidation of Cu occurs via Cu2O islanding on an oxide wetting layer at a critical thickness of two atomic layers. The transition from 2D wetting-layer growth to 3D oxide islanding is driven energetically arising from the Cu-Cu2O interfacial interaction.