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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices

DOI: 10.1039/c5tc04410c

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High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

This paper is available in a repository.
This paper is available in a repository.

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Abstract

Ultrathin SnS nanobelts were synthesized via physical vapor deposition (PVD). Furthermore, high performance near-infrared (NIR) photodetectors based on SnS nanobelts showed an excellent photoresponsivity of 300 A W-1 under 800 nm light illumination with an external quantum efficiency of 4.65 × 104% and a detectivity of 6 × 109 Jones, as well as fast rise and decay times (τrise = 36 ms and τdecay = 7 ms), suggesting a promising future for the utilization of the SnS nanobelts in practical NIR light sensors.