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American Institute of Physics, Applied Physics Letters, 7(108), p. 072102, 2016

DOI: 10.1063/1.4942369

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Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Journal article published in 2016 by Hironori Okumura, Denis Martin, Marco Malinverni ORCID, Nicolas Grandjean ORCID
This paper is available in a repository.
This paper is available in a repository.

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