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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 5(4), p. 921-928

DOI: 10.1039/c5tc03042k

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Ferrocene-containing poly(fluorenylethynylene)s for nonvolatile resistive memory devices

Journal article published in 2016 by Jing Xiang, Tai-Kang Wang, Qiang Zhao, Wei Huang ORCID, Cheuk-Lam Ho, Wai-Yeung Wong
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The memory behaviours of the prepared ferrocene-containing poly(fluorenylethynylene)s (PFcFE) can be easily tuned by changing the chemical structures of the embedded aromatic building blocks.