Published in
Elsevier, Microelectronic Engineering, 9-10(84), p. 1874-1877
DOI: 10.1016/j.mee.2007.04.108
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The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs
Journal article published in 2007 by
M. A. Negara,
K. Cherkaoui,
P. Majhi,
C. D. Young,
W. Tsai,
D. Bauza,
G. Ghibaudo,
P. K. Hurley 
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