Two-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p- and n-type semiconductor are fabricated both on glass and SiO2/p+-Si by a direct imprinting. Superior electrostatic and dynamic performances are acquired from the diode on glass when electric dipole-containing fluoropolymer was employed as an encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification.