Published in
Royal Society of Chemistry, CrystEngComm, 30(17), p. 5849-5859, 2015
DOI: 10.1039/c5ce00543d
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Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD
Journal article published in 2015 by
Jung-Wook Min,
Si-Young Bae,
Won-Mo Kang,
Kwang Wook Park 
,
Eun-Kyu Kang,
Bong-Joong Kim,
Dong-Seon Lee,
Yong-Tak Lee
,
Eun-Kyu Kang,
Bong-Joong Kim,
Dong-Seon Lee,
Yong-Tak Lee
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Abstract
Epitaxial GaN layers are grown on amorphous substrate by the combination of MBE and MOCVD. MBE growth step provided uniform, preferred orientation and MOCVD enabled improved crystalline quality.