Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 15(3), p. 3623-3628, 2015
DOI: 10.1039/c4tc02984d
Full text: Unavailable
A potential gate dielectric material that can be cured and processed at low temperatures was designed and synthesized via the cross-linking of bisphenol A novolac (Novolac) and hexamethoxymethylmelamine (HMMM) in the presence of a catalytic amount of p-toluenesulfonic acid.