Published in
Royal Society of Chemistry, Chemical Communications, 10(50), p. 1224-1226, 2014
DOI: 10.1039/c3cc47224h
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Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature
Journal article published in 2013 by
Luyang Wang,
Younghun Park,
Peng Cui,
Sora Bak,
Hanleem Lee 
,
Sae Mi Lee,
Hyoyoung Lee
,
Sae Mi Lee,
Hyoyoung Lee
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Abstract
We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.