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Elsevier, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1-4(186), p. 121-125

DOI: 10.1016/s0168-583x(01)00871-0

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Defect engineering in Czochralski silicon by electron irradiation at different temperatures

Journal article published in 2002 by J. L. Lindström, L. I. Murin, T. Hallberg, V. P. Markevich ORCID, B. G. Svensson, M. Kleverman, J. Hermansson
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This paper is available in a repository.

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Abstract

Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80–900 K) have been performed. The samples with different contents of oxygen (16O,18O) and carbon (12C,13C) isotopes were investigated. The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot+room-temperature (RT)) irradiation.