Published in
American Institute of Physics, Journal of Applied Physics, 2(109), p. 024101
DOI: 10.1063/1.3533959
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A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers
Journal article published in 2011 by
E. OConnor,
É. O’Connor,
É. O’Connor,
B. Brennan,
V. Djara,
K. Cherkaoui,
S. Monaghan,
S. B. Newcomb,
R. Contreras,
M. Milojevic,
G. Hughes,
M. E. Pemble,
R. M. Wallace 
,
P. K. Hurley
,
P. K. Hurley
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