In this study we have used a facile, economical and scalable synthesis technique for the fabrication of super long V2O5 nanobelts. The as synthesized product was characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), high resolution transmission electron microscopy and selected area electron diffraction (SAED). The nanobelts had an optical bandgap of 2.3 eV. The Raman spectrum confirmed the pure state of V2O5 nanobelts. A low turn-on field of 1.4 V[small mu ]m-1 and a threshold field of 2.13 V[small mu ]m-1 were obtained for V2O5 super long nanobelts. The Carrier concentrations Nd= 1.48[times]1018 cm-3 and electron mobility = 1.26 cm2/Vs and conductivity= 36.1 S/m was calculated using MSM model. The field emission measurements along with electrical characteristics of V2O5 nanobelts indicate that these nanobelts can be promising candidate for applications as field emission displays