An unprecedented approach to fabricate patterned rubrene thin-film transistors (TFTs) is presented by combining an abrupt heating method with selective electron irradiation of polystyrene dielectric layers. We found that an amorphous rubrene is crystallized only on electron-irradiated polystyrene (PS) while no crystallization of rubrene occurs on unirradiated PS by the abrupt heating process. Based on this finding, patterned rubrene semiconductor could be successfully fabricated by irradiating an electron beam onto selective regions of a PS layer followed by the abrupt heating process. The patterned rubrene TFTs exhibited good performances with charge mobilities of ~1.3 cm²V⁻¹s⁻¹ and on/off ratios higher than 10⁸.