Published in
American Institute of Physics, Applied Physics Letters, 2(92), p. 022902
DOI: 10.1063/1.2829586
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In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
Journal article published in 2008 by
E. OConnor,
E. O’Connor,
R. D. Long,
K. Cherkaoui,
K. K. Thomas,
F. Chalvet,
I. M. Povey,
M. E. Pemble,
P. K. Hurley 
,
B. B. Brennan,
G. Hughes,
S. B. Newcomb
,
B. B. Brennan,
G. Hughes,
S. B. Newcomb
This paper is available in a repository.
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