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Elsevier, Physica B: Condensed Matter, (340-342), p. 790-794

DOI: 10.1016/j.physb.2003.09.214

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Electronic properties of vacancy-oxygen complexes in SiGe alloys

Journal article published in 2003 by V. P. Markevich ORCID, A. R. Peaker, L. I. Murin, J. Coutinho, V. J. B. Torres, R. Jones, Sven Öberg, P. R. Briddon, F. D. Auret, N. V. Abrosimov
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Capacitance transient techniques, combined with ab initio modeling, were employed to study the electronic properties and structure of vacancy-oxygen (VO) complexes in unstrained Czochralski-grown Si 1- x Ge x crystals (0