This paper reported solution-processed metal oxide semiconductor thin film transistors (TFTs) which were produced using fluorine (F) doped ZnO-based aqueous solution. It was found that doping F in ZnO film improves thin film transparency and the TFT performance with ultrahigh on/off ratio of 108. The F doped ZnO TFT devices showed no improvement on shelf-life stability but improved bias stress stability. Most importantly, when ZnO:F co-doped with alkali metals like Li, Na, and K, the co-doped ZnO TFT devices exhibited much higher electron mobility, in comparison with ZnO or ZnO:F TFTs. In addition, the co-doped TFT device exhibited excellent shelf-life stability and bias stress stability. These results suggest that F and alkaline metal co-doping can be a useful technique to produce more reliable and low temperature solution-processed ZnO semiconductor for TFTs and their application.