Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 3(3), p. 674-685, 2015
DOI: 10.1039/c4tc02158d
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Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: synthesis, characterization and electronic properties
Journal article published in 2014 by
Claude Niebel 
,
Yeongin Kim,
Christian Ruzié,
Jolanta Karpinska,
Basab Chattopadhyay,
Guillaume Schweicher,
Audrey Richard,
Vincent Lemaur,
Yoann Olivier,
Jérôme Cornil,
Alan R. Kennedy,
Ying Diao,
Wen-Ya Lee,
Stefan Mannsfeld,
Zhenan Bao
and other authors.
,
Yeongin Kim,
Christian Ruzié,
Jolanta Karpinska,
Basab Chattopadhyay,
Guillaume Schweicher,
Audrey Richard,
Vincent Lemaur,
Yoann Olivier,
Jérôme Cornil,
Alan R. Kennedy,
Ying Diao,
Wen-Ya Lee,
Stefan Mannsfeld,
Zhenan Bao
and other authors.
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Abstract
Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V−1 s−1.