American Physical Society, Physical Review Letters, 1(80), p. 93-96, 1998
DOI: 10.1103/physrevlett.80.93
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Optical characterization of the oxygen dimer in silicon has been performed for the first time. The vibrational IR absorption bands at 1012, 1060, and 1105 cm-1 are shown to arise from this complex. Using heat-treatment studies, the dimer binding energy is determined to be about 0.3 eV. Indications of the high migration ability of the dimer predicted earlier are found as well.