Vacancy-related complexes which were generated in silicon p+ -n diodes by irradiation with 6 Me V electrons in the temperature range of 350-800 K have been studied by means of deep level transient spectroscopy. Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. Electronic parameters of defects incorporating up to three vacancies and an oxygen atom have been determined. Total introduction rate of radiation-induced defects increased about twice upon raising the irradiation temperature from 350 to 675 K.