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Royal Society of Chemistry, Physical Chemistry Chemical Physics, 18(17), p. 12056-12064

DOI: 10.1039/c5cp01313e

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Improving As(III) adsorption on graphene based surfaces: Impact of chemical doping

Journal article published in 2015 by Diego Cortes-Arriagada, Alejandro Toro-Labbe ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

On the basis of quantum chemistry calculations, the adsorption of As(III) onto graphene based adsorbents has been studied. The energetic and molecular properties that characterize the adsorption has been analyzed, and new adsorbents were proposed. The experimentally reported inefficient adsorption of As(III) by intrinsic graphene is theoretically characterized by a low adsorption energy (0.3 eV), which is decreased by solvent effects. Two stable conformations were found for the adsorbent-adsorbate systems. The As(III) removal by unmodified oxidized graphene (GO) reaches a medium size adsorption strength (<0.8 eV), still remaining low for high removal efficiency from a water environment. While the As(III) adsorption onto boron, nitrogen and phosphorous doped graphene is not favored with respect to the pristine adsorbent, aluminium, silicon and iron embedded graphene can adsorb As(III) by both chemical and physical interactions with high adsorption energies (> 1 eV), even stable considering a solvent env