Royal Society of Chemistry, Nanoscale Horizons, 1(9), p. 132-142, 2024
DOI: 10.1039/d3nh00358b
Full text: Unavailable
We present the use of an in situ self-limited thinning of few-layer WS2 formed by the sulfurization of WOx for the growth of wafer-scale fully-covered monolayer WS2. This thinning approach can also be utilized for the preparation of monolayer MoS2.