Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 12(9), p. 4307-4315, 2021
DOI: 10.1039/d0tc05439a
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Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking
Journal article published in 2021 by
Tai Nguyen 
,
Nathalie Valle,
Jérôme Guillot ,
Jérôme Bour,
Noureddine Adjeroud,
Yves Fleming ,
Mael Guennou ,
Jean-Nicolas Audinot ,
Brahime El Adib,
Raoul Joly,
Didier Arl ,
Gilles Frache,
Jérôme Polesel-Maris
,
Nathalie Valle,
Jérôme Guillot ,
Jérôme Bour,
Noureddine Adjeroud,
Yves Fleming ,
Mael Guennou ,
Jean-Nicolas Audinot ,
Brahime El Adib,
Raoul Joly,
Didier Arl ,
Gilles Frache,
Jérôme Polesel-Maris
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Abstract
The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen 18O from the water precursor and oxygen 16O from the gas.