Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 11(42), p. 1607-1610, 2021
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Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory
Journal article published in 2021 by
Munhyeon Kim 
,
Kitae Lee ,
Sihyun Kim ,
Jong-Ho Lee ,
Byung-Gook Park ,
Daewoong Kwon
,
Kitae Lee ,
Sihyun Kim ,
Jong-Ho Lee ,
Byung-Gook Park ,
Daewoong Kwon
This paper was not found in any repository, but could be made available legally by the author.
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