Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 42(9), p. 15212-15220, 2021
DOI: 10.1039/d1tc03370k
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The extrinsic Pb0 interfacial trap states induce strong Fermi-level pinning at metal/CH3NH3PbI3 interfaces. This is due to the interfacial reaction between the deposited metals and iodine from CH3NH3PbI3.