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Royal Society of Chemistry, Nanoscale, 44(13), p. 18441-18450, 2021

DOI: 10.1039/d1nr06190a

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Rotated domains in selective area epitaxy grown Zn<sub>3</sub>P<sub>2</sub>: formation mechanism and functionality

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Growth process for Zn3P2 nanowires grown on InP at different angles by SAE and formation of rotated domains at (100) and (101) facets.