Published in

Royal Society of Chemistry, Nanoscale, 11(14), p. 4114-4122, 2022

DOI: 10.1039/d1nr06906c

Links

Tools

Export citation

Search in Google Scholar

Tuning the Schottky barrier height in a multiferroic In<sub>2</sub>Se<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals heterojunction

Journal article published in 2022 by M. Javaid ORCID, Patrick D. Taylor ORCID, Sherif Abdulkader Tawfik ORCID, Michelle J. S. Spencer ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Orange circle
Postprint: archiving restricted
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

Our work presents a tuneable and switchable Schottky barrier without the need to apply any external electric field or strain, which promotes the controllability of carrier transport in high-density memory devices.