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Royal Society of Chemistry, Nanoscale, 37(14), p. 13608-13613, 2022

DOI: 10.1039/d2nr03578b

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Tunneling transport of 2D anisotropic XC (X = P, As, Sb, Bi) with a direct band gap and high mobility: a DFT coupled with NEGF study

Journal article published in 2022 by Xuemin Hu, Wenqiang Liu ORCID, Jialin Yang, Wei Wang, Luanhong Sun, Xiaoqin Shi, Yufeng Hao, Shengli Zhang ORCID, Wenhan Zhou ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

α-XC (X = P, As, Sb, Bi) monolayers hold a direct band gap of 0.73 to 1.40 eV and exhibit a high electron mobility of up to 8 × 103 cm2 V−1 s−1. 2D α-XC TFETs present good device performance and excellent device switching characteristics.