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American Physical Society, Physical review B, 8(78)

DOI: 10.1103/physrevb.78.085202

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Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Journal article published in 2008 by J. Slotte, M. Rummukainen, Filip Tuomisto, V. P. Markevich ORCID, A. R. Peaker, C. Jeynes, R. M. Gwilliam ORCID, M. Rummukainen and F. Tuomisto V P. Markevich and A. R. Peaker C Jeynes and R. M. Gwilliam J. Slotte
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Abstract

Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×10 exp 12 cm exp−2 and 4×10 exp 14 cm exp−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×10 exp 13 cm exp −2 and a fluence of 1×10 exp 14 cm exp -2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species. ; Peer reviewed