Elsevier, Materials Science in Semiconductor Processing, 5-6(11), p. 354-359
DOI: 10.1016/j.mssp.2008.09.007
Full text: Unavailable
Results of a study of electrically active defects induced in Sb-doped Ge crystals by implantations of hydrogen and helium ions (protons and alpha particles) with energies in the range from 500 keV to 1 MeV and doses in the range 1×1010?1×1014 cm−2 are presented in this work. Transformations of the defects upon post-implantation isochronal anneals in the temperature range 50?350 °C have also been studied. The results have been obtained by means of capacitance?voltage (C?V) measurements and deep-level transient spectroscopy (DLTS). It was found from an analysis of DLTS spectra that low doses (