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Elsevier, Materials Science in Semiconductor Processing, 5-6(11), p. 354-359

DOI: 10.1016/j.mssp.2008.09.007

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Electrically active defects induced by hydrogen and helium implantations in Ge

Journal article published in 2008 by V. P. Markevich ORCID, S. Bernardini I D. Hawkins A R. Peaker Vl Kolkovsky A Nylandsted Larsen L Dobaczewski V. P. Markevich, S. Bernardini, I. D. Hawkins, A. R. Peaker, V.-L. Kolkovsky, A. Nylandsted Larsen, L. Dobaczewski
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Results of a study of electrically active defects induced in Sb-doped Ge crystals by implantations of hydrogen and helium ions (protons and alpha particles) with energies in the range from 500 keV to 1 MeV and doses in the range 1×1010?1×1014 cm−2 are presented in this work. Transformations of the defects upon post-implantation isochronal anneals in the temperature range 50?350 °C have also been studied. The results have been obtained by means of capacitance?voltage (C?V) measurements and deep-level transient spectroscopy (DLTS). It was found from an analysis of DLTS spectra that low doses (