Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Nanotechnology, (21), p. 534-538, 2022
DOI: 10.1109/tnano.2022.3207505
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Investigation on Variability of Ferroelectric-Gate Field-Effect Transistor Memory by Random Spatial Distribution of Interface Trap
Journal article published in 2022 by
Kitae Lee 
,
Sihyun Kim ,
Munhyeon Kim ,
Jong-Ho Lee ,
Byung-Gook Park ,
Daewoong Kwon
,
Sihyun Kim ,
Munhyeon Kim ,
Jong-Ho Lee ,
Byung-Gook Park ,
Daewoong Kwon
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