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Royal Society of Chemistry, Nanoscale, 48(13), p. 20657-20662, 2021

DOI: 10.1039/d1nr06863f

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Pyroelectric effect mediated infrared photoresponse in Bi<sub>2</sub>Te<sub>3</sub>/Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–PbTiO<sub>3</sub> optothermal ferroelectric field-effect transistors

Journal article published in 2021 by R. Zheng ORCID, M. Y. Yan, C. Li, S. Q. Yin, W. D. Chen, G. Y. Gao, J. M. Yan ORCID, Y. Chai
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A modulation of the resistance of Bi2Te3 films via the pyroelectric effect in Bi2Te3/Pb(Mg1/3Nb2/3)O3–PbTiO3 optothermal ferroelectric field-effect transistors.