Published in

Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 39(9), p. 13748-13754, 2021

DOI: 10.1039/d1tc03073f

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Highly efficient and stable quantum dot light-emitting devices with a low-temperature tin oxide electron transport layer

Journal article published in 2021 by Haiwei Feng, Shihao Liu ORCID, Ge Tang, Letian Zhang ORCID, Wenfa Xie ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

UVO treatment is proposed to decompose the residual tin hydroxide in an SnO2 ETL film. With UVO treatment, efficient and stable QLEDs are fabricated with a low-temperature SnO2 transport layer.