Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 42(9), p. 15354-15358, 2021
DOI: 10.1039/d1tc04219j
Full text: Unavailable
A large conductivity difference exists between the {0001} and {101̄0} faces of a GaN wafer. Current-rectifying I–V curves were obtained with electrodes contacting both faces simultaneously.