Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 5(10), p. 1825-1832, 2022
DOI: 10.1039/d1tc05098b
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A tunable band gap of the layered semiconductor Zn<sub>3</sub>In<sub>2</sub>S<sub>6</sub> under pressure
Journal article published in 2022 by
Resta A. Susilo 
,
Yu Liu ,
Hongwei Sheng,
Hongliang Dong,
Raimundas Sereika ,
Bongjae Kim ,
Zhixiang Hu,
Shujia Li,
Mingzhi Yuan,
Cedomir Petrovic ,
Bin Chen
,
Yu Liu ,
Hongwei Sheng,
Hongliang Dong,
Raimundas Sereika ,
Bongjae Kim ,
Zhixiang Hu,
Shujia Li,
Mingzhi Yuan,
Cedomir Petrovic ,
Bin Chen
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Abstract
A highly tunable band gap of the layered semiconductor Zn3In2S6 under pressure is reported. The change in the band gap is strongly coupled to the variation and transformation of the crystal structure.