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Royal Society of Chemistry, CrystEngComm, 9(25), p. 1374-1382, 2023

DOI: 10.1039/d2ce01438f

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P–n junctions in planar GaAs nanowires

Journal article published in 2023 by Bogdan R. Borodin ORCID, Prokhor A. Alekseev ORCID, Vladislav Khayrudinov ORCID, Evgeniy Ubyivovk ORCID, Yury Berdnikov, Nickolay Sibirev, Harri Lipsanen ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Experimental characterization, analytical growth models, and numerical simulations are combined to define strategies for tailoring doping inside planar GaAs nanowires.