Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 44(9), p. 15868-15876, 2021
DOI: 10.1039/d1tc02852a
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Epitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub> (−201) thin film on four-fold symmetry CeO<sub>2</sub> (001) substrate for heterogeneous integrations
Journal article published in 2021 by
Xiao Tang 
,
Kuang-Hui Li ,
Che-Hao Liao ,
Dongxing Zheng,
Chen Liu,
Rongyu Lin ,
Na Xiao,
Shibin Krishna,
Jose Tauboada,
Xiaohang Li
,
Kuang-Hui Li ,
Che-Hao Liao ,
Dongxing Zheng,
Chen Liu,
Rongyu Lin ,
Na Xiao,
Shibin Krishna,
Jose Tauboada,
Xiaohang Li
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Abstract
High quality (−201) orientated β-Ga2O3 thin films are obtained on four-fold symmetric cubic phase CeO2 (001) substrates and are fabricated into photodetectors with excellent photoelectrical performance.